TPCF8001 2007-01-16 1 toshiba field effect transistor silicon n chann el mos type (u-mos iii) TPCF8001 notebook pc applications portable equipment applications ? low drain-source on resistance: r ds (on) = 19 m ? (typ.) ? high forward transfer admittance: |y fs | = 8 s (typ.) ? low leakage current: i dss = 10 a (max.) (v ds = 30 v) ? enhancement mode: v th = 1.3 to 2.5 v (v ds = 10 v, i d = 1ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 30 v drain-gate voltage (r gs = 20 k ) v dgr 30 v gate-source voltage v gss 20 v dc (note 1) i d 7 drain current pulse (note 1) i dp 28 a drain power dissipation (t = 5 s) (note 2a) p d 2.5 w drain power dissipation (t = 5 s) (note 2b) p d 0.7 w single-pulse avalanche energy (note 3) e as 8 mj avalanche current i ar 3.5 a repetitive avalanche energy (note 4) e ar 0.25 mj channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: for notes 1 to 5, refer to the next page using continuously under heavy loads (e .g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec D jeita D toshiba 2-3u1a weight: 0.011 g (typ.) circuit configuration 8 6 1 2 3 7 5 4
TPCF8001 2007-01-16 2 thermal characteristics characteristics symbol max. unit thermal resistance, channel to ambient (t = 5 s) (note 2a) r th (ch-a) 50.0 c/w thermal resistance, channel to ambient (t = 5 s) (note 2b) r th (ch-a) 178.6 c/w marking (note 5) note 1: ensure that the channel temperature does not exceed 150c. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 0.5 mh, r g = 25 , i ar = 3.5 a note 4: repetitive rating: pulse width limited by maximum channel temperature note 5: ? ? on the lower left of the marking indicates pin 1. (b) fr-4 25.4 25.4 0.8 (unit: mm) (a) fr-4 25.4 25.4 0.8 (unit: mm) part no. (or abbreviation code) f2a a line indicates lead (pb)-free package or lead (pb)-free finish. lot code (month) lot no. pin #1 lot code (year) product-specific code
TPCF8001 2007-01-16 3 electrical characteristics (ta = 25c) characteristics symbol test condition min. typ. max. unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = 30 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 30 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 15 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1ma 1.3 ? 2.5 v v gs = 4.5 v, i d = 3.5 a ? 24 31 drain-source on resistance r ds (on) v gs = 10 v, i d = 3.5 a ? 19 23 m forward transfer admittance |y fs | v ds = 10 v, i d = 3.5 a 4 8 ? s input capacitance c iss ? 1270 ? reverse transfer capacitance c rss ? 150 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 190 ? pf rise time t r ? 3.8 ? turn-on time t on ? 9.4 ? fall time t f ? 8.4 ? switching time turn-off time t off duty < = 1%, t w = 10 s ? 40 ? ns total gate charge (gate-source plus gate-drain) q g ? 25.4 ? gate-source charge 1 q gs1 ? 3.6 ? gate-drain (?miller?) charge q gd v dd ? 24 v, v gs = 10 v, i d = 7.0 a ? 6.2 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min. typ. max. unit drain reverse current pulse (note 1) i drp ? ? ? 28 a forward voltage (diode) v dsf i dr = 7.0 a, v gs = 0 v ? ? -1.2 v r l = 4.3 v dd ? 15 v 0v v gs 10 v 4.7 i d = 3.5 a v out
TPCF8001 2007-01-16 4 drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) (m ) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) drain-source voltage v ds (v) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) ? y fs ? ? i d forward transfer admittance ? y fs ? (s) common source v ds = 10 v pulse test 0 0 1 2 3 4 5 4 10 ta = ? 55c 25 100 6 8 2 common source ta = 25 pulse test 0 0.3 0.4 0.5 0 i d = 7 a 2 4 6 8 10 1.75 3.5 0.2 0.1 common source v ds = 10 v pulse test 0.1 10 100 0.1 1 100 25 100 ta = ? 55c 1 10 common source ta = 25c pulse test 5 3 2 0 4 1 0 0.2 0.4 0.6 0.8 v gs = 2.5v 2.6 2.8 2.7 3 2.9 4.5 10 1.0 3.5 3.2 common source ta = 25c pulse test 8 6 4 2 0 10 0 2 5 2.6 2.7 2.8 3.1 10 2.9 3 4 3 1 3.2 v gs = 2.5 v 4.5 3.5 common source ta = 25c pulse test 1 0.1 1 10 100 10 1000 v gs = 10 v 100 4.5
TPCF8001 2007-01-16 5 drain-source voltage v ds (v) capacitance c (pf) capacitance ? v ds 1 0.1 10 100 1000 10000 1 10 100 c iss c oss c rss common source v gs = 0 v f = 1 mhz ta = 25c ambient temperature ta (c) r ds (on) ? ta drain-source on resistance r ds (on) ( m ) gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) gate threshold voltage v th (v) ambient temperature ta (c) v th ? ta 0 1 2 4 ? 80 ? 40 0 40 80 120 160 3 common source v ds = 10 v i d = 1 ma pulse test drain power dissipation p d (w) ambient temperature ta (c) p d ? ta drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) 0 1 ? 0.4 10 100 ? 1.2 ? 1.6 v gs = 0 v 10 4.5 1 2 ? 0.8 ? 2 common source ta = 25c pulse test 16 8 4 12 0 0 8 24 v dd = 24 v v ds v gs 6 12 32 40 40 20 10 30 0 16 common source i d = 7 a ta = 25c pulse test 0 0 40 80 120 160 0.5 1.5 2 2.5 3 1 (1) t = 5 s (1) dc (2) t = 5 s (2) dc (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) 160 ? 40 0 40 80 120 ? 80 50 40 30 20 10 0 i d = 7a,3.5a,1.75a v gs = 10 v common source pulse test v gs = 4.5 v i d = 7a,3.5a,1.75a
TPCF8001 2007-01-16 6 r th ? t w pulse width t w (s) transient thermal impedance r th (c/w) safe operating area drain-source voltage v ds (v) drain current i d (a) 0.1 1 m 10 m 100 m 1 10 100 1000 1 10 100 1000 device mounted on a glass-epoxy board (a) (note 2a) device mounted on a glass-epoxy board (b) (note 2b) 0.1 0.1 1 10 100 1 10 100 10 ms * i d max (pulse) * v dss max 1 ms * * single pulse ta = 25c curves must be derated linearly with increase in temperature.
TPCF8001 2007-01-16 7 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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